PART |
Description |
Maker |
BB641 Q62702-B792 SIEMENSAG-Q62702-B792 |
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance) From old datasheet system
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SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
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MA840 MA2C840 |
Variable Capacitance Diodes VHF-UHF BAND, 13.25 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34
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PANASONIC CORP Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
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HVU202B |
Diodes>Variable Capacitance Variable Capacitance Diode for UHF/VHF tuner
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Renesas Electronics Corporation
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G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343 |
InGaAs PIN photodiode with preamp Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; Case Size: 30x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 25x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; Case Size: 22x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 25x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; Case Size: 25x50 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 25x40 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 30x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk Optoelectronic 光电 InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
HAMAMATSU[Hamamatsu Corporation] NXP Semiconductors N.V. Hamamatsu Photonics K.K.
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MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE From old datasheet system
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Leshan Radio Company, Ltd. ONSEMI[ON Semiconductor]
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SGH30N60RUF SGH30N60RUFTU |
Discrete, Short Circuit Rated IGBT Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB From old datasheet system
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NXP Semiconductors N.V. Philipss Philips Semiconductors
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HVU350B |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVD362 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
HVL355CM |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVU359 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
BB304A Q62702-B118 SIEMENSAG-BB304A |
From old datasheet system Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 42 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG Siemens Group
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